IGBT transistor STGW60V60DF. Assembly/installation: PCB through-hole mounting. C(in): 8000pF. CE diode: yes. Channel type: N. Collector current: 80A. Collector/emitter voltage Vceo: 600V. Conditioning unit: 30. Conditioning: plastic tube. Cost): 280pF. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 7V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing: TO-247. Ic(T=100°C): 60A. Ic(pulse): 240A. Marking on the case: GW60V60DF. Maximum saturation voltage VCE(sat): 2.3V. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 375W. RoHS: yes. Saturation voltage VCE(sat): 1.85V. Spec info: Trench gate field-stop IGBT, V series. Td(off): 216 ns. Td(on): 57 ns. Trr Diode (Min.): 74 ns. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54