IGBT transistor STGW40NC60KD. Assembly/installation: PCB through-hole mounting. C(in): 2870pF. CE diode: yes. Channel type: N. Collector current: 70A. Collector/emitter voltage Vceo: 600V. Conditioning unit: 30. Conditioning: plastic tube. Cost): 295pF. Function: IGBT transistor with built-in high-speed free-wheeling diode. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (according to data sheet): TO-247AC. Housing: TO-247. Ic(T=100°C): 38A. Ic(pulse): 220A. Marking on the case: GW20NC60KD. Maximum saturation voltage VCE(sat): 2.7V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 250W. RoHS: yes. Saturation voltage VCE(sat): 2.1V. Spec info: Very Fast PowerMESH™ IGBT. Td(off): 164 ns. Td(on): 46 ns. Trr Diode (Min.): 45 ns. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54