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Semiconductors Transistors IGBT transistors

IGBT transistor STGW40NC60KD

IGBT transistor STGW40NC60KD
Quantity excl. VAT VAT incl.
1 - 1 8.88$ 8.88$
2 - 2 8.43$ 8.43$
3 - 4 7.99$ 7.99$
5 - 9 7.54$ 7.54$
10 - 19 7.37$ 7.37$
20 - 23 7.19$ 7.19$
Quantity U.P
1 - 1 8.88$ 8.88$
2 - 2 8.43$ 8.43$
3 - 4 7.99$ 7.99$
5 - 9 7.54$ 7.54$
10 - 19 7.37$ 7.37$
20 - 23 7.19$ 7.19$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 23
Set of 1

IGBT transistor STGW40NC60KD. IGBT transistor. C(in): 2870pF. Cost): 295pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: IGBT transistor with built-in high-speed free-wheeling diode. Collector current: 70A. Ic(pulse): 220A. Ic(T=100°C): 38A. Marking on the case: GW20NC60KD. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 164 ns. Td(on): 46 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Spec info: Very Fast PowerMESH™ IGBT. CE diode: yes. Germanium diode: no. Quantity in stock updated on 15/04/2025, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 12
HGTG30N60A4

HGTG30N60A4

N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing ...
HGTG30N60A4
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS Series IGBT. Collector current: 75A. Ic(pulse): 240A. Marking on the case: G30N60A4. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. CE diode: no. Germanium diode: no
HGTG30N60A4
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS Series IGBT. Collector current: 75A. Ic(pulse): 240A. Marking on the case: G30N60A4. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. CE diode: no. Germanium diode: no
Set of 1
11.03$ VAT incl.
(11.03$ excl. VAT)
11.03$

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