IGBT transistor SKW30N60HS

Quantity	excl. VAT	VAT incl.
1 - 1	8.23$	8.23$
2 - 2	7.82$	7.82$
3 - 4	7.41$	7.41$
5 - 9	7.00$	7.00$
10 - 14	6.83$	6.83$
15 - 19	6.67$	6.67$
20 - 150	6.42$	6.42$

Quantity	U.P
1 - 1	8.23$	8.23$
2 - 2	7.82$	7.82$
3 - 4	7.41$	7.41$
5 - 9	7.00$	7.00$
10 - 14	6.83$	6.83$
15 - 19	6.67$	6.67$
20 - 150	6.42$	6.42$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 150

Set of 1

IGBT transistor SKW30N60HS. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: K30N60HS. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 41A. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 250 ns. Gate breakdown voltage Ugs [V]: 5V. Maximum dissipation Ptot [W]: 250W. Maximum collector current (A): 112A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Assembly/installation: PCB through-hole mounting. Td(off): 106 ns. Td(on): 16 ns. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Quantity in stock updated on 23/04/2025, 11:25.

Technical documentation