IGBT transistor IRG4BC20KDPBF
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IGBT transistor IRG4BC20KDPBF. Assembly/installation: PCB through-hole mounting. C(in): 450pF. CE diode: yes. Channel type: N. Collector current Ic [A]: 16A. Collector current: 16A. Collector peak current Ip [A]: 32A. Collector-emitter voltage Uce [V]: 600V. Collector/emitter voltage Vceo: 600V. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Configuration: PCB through-hole mounting. Cost): 61pF. Function: Short Circuit Rated, UltraFast IGBT. Gate breakdown voltage Ugs [V]: 6V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (JEDEC standard): TO-220AB. Housing (according to data sheet): TO-220 ( AB ). Housing: TO-220. Ic(T=100°C): 9A. Ic(pulse): 32A. Manufacturer's marking: IRG4BC20KD. Marking on the case: G4BC20KD. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 60W. Maximum saturation voltage VCE(sat): 2.8V. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Saturation voltage VCE(sat): 2.27V. Switch-off delay tf[nsec.]: 180 ns. Switch-on time ton [nsec.]: 54 ns. Td(off): 180 ns. Td(on): 54 ns. Trr Diode (Min.): 37 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13