IGBT transistor IKW50N120CS7XKSA1
Quantity
Unit price
1-4
25.90$
5-9
24.34$
10-19
23.81$
20-49
23.34$
50+
22.68$
| +1 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Quantity in stock: 1 |
IGBT transistor IKW50N120CS7XKSA1. Built-in diode: yes. Charge: 290nC. Collector current Ic [A]: 50A. Collector current: 82A. Collector peak current Ip [A]: 150A. Collector-emitter voltage: 1200V. Emitter - Gate Voltage: ±20V. Housing: TO-247AC. Power: 428W. RoHS: yes. Type of transistor: IGBT transistor. Voltage (collector - emitter): 1200V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 12/18/2025, 05:00
IKW50N120CS7XKSA1
13 parameters
Built-in diode
yes
Charge
290nC
Collector current Ic [A]
50A
Collector current
82A
Collector peak current Ip [A]
150A
Collector-emitter voltage
1200V
Emitter - Gate Voltage
±20V
Housing
TO-247AC
Power
428W
RoHS
yes
Type of transistor
IGBT transistor
Voltage (collector - emitter)
1200V
Original product from manufacturer
Infineon Technologies