IGBT transistor IKW25N120T2. Collector current Ic [A]: 25A. Collector peak current Ip [A]: 100A. Collector-emitter voltage Uce [V]: 1.2 kV. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Configuration: PCB through-hole mounting. Gate breakdown voltage Ugs [V]: 6.4V. Housing (JEDEC standard): -. Housing: TO-247. Manufacturer's marking: K25T1202. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 349W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 265 ns. Switch-on time ton [nsec.]: 27 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/01/2025, 21:12