IGBT transistor IKW25N120T2
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 15.97$ | 15.97$ |
| 2 - 2 | 15.17$ | 15.17$ |
| 3 - 4 | 14.85$ | 14.85$ |
| 5 - 9 | 14.37$ | 14.37$ |
| 10 - 14 | 14.05$ | 14.05$ |
| 15 - 19 | 13.57$ | 13.57$ |
| 20 - 389 | 13.09$ | 13.09$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 15.97$ | 15.97$ |
| 2 - 2 | 15.17$ | 15.17$ |
| 3 - 4 | 14.85$ | 14.85$ |
| 5 - 9 | 14.37$ | 14.37$ |
| 10 - 14 | 14.05$ | 14.05$ |
| 15 - 19 | 13.57$ | 13.57$ |
| 20 - 389 | 13.09$ | 13.09$ |
IGBT transistor IKW25N120T2. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: K25T1202. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 25A. Maximum collector current (A): 100A. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 265 ns. Gate breakdown voltage Ugs [V]: 6.4V. Maximum dissipation Ptot [W]: 349W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +175°C. Original product from manufacturer Infineon. Quantity in stock updated on 31/05/2025, 22:25.
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