IGBT transistor IKW25N120H3FKSA1
Quantity
Unit price
1-1
12.65$
2-3
11.34$
4-5
10.34$
6-29
9.37$
30+
9.34$
| Quantity in stock: 7 |
IGBT transistor IKW25N120H3FKSA1. Built-in diode: yes. Collector current: 50A. Drain-source voltage: 1200V. Housing: TO-247AC. Power: 326W. Type of transistor: IGBT transistor. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/29/2025, 07:20
IKW25N120H3FKSA1
7 parameters
Built-in diode
yes
Collector current
50A
Drain-source voltage
1200V
Housing
TO-247AC
Power
326W
Type of transistor
IGBT transistor
Original product from manufacturer
Infineon Technologies