IGBT transistor IHW30N120R5XKSA1. Assembly/installation: PCB through-hole mounting. C(in): 1800pF. CE diode: yes. Channel type: N. Collector current: 60A. Collector/emitter voltage Vceo: 1200V. Conditioning unit: 30. Conditioning: plastic tube. Cost): 55pF. Function: Inductive Cooking, Microwave Ovens. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (according to data sheet): PG-TO247-3. Housing: TO-247. Ic(T=100°C): 30A. Ic(pulse): 90A. Marking on the case: H30MR5. Maximum saturation voltage VCE(sat): 1.85V. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 330W. RoHS: yes. Saturation voltage VCE(sat): 1.55V. Spec info: Reverse conducting IGBT with monolithic body diode. Td(off): 330 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27