IGBT transistor IGW60T120

Quantity	excl. VAT	VAT incl.
1 - 1	13.54$	13.54$
2 - 2	12.87$	12.87$
3 - 4	12.60$	12.60$
5 - 9	12.19$	12.19$
10 - 14	11.92$	11.92$
15 - 19	11.51$	11.51$
20 - 67	11.11$	11.11$

Quantity	U.P
1 - 1	13.54$	13.54$
2 - 2	12.87$	12.87$
3 - 4	12.60$	12.60$
5 - 9	12.19$	12.19$
10 - 14	11.92$	11.92$
15 - 19	11.51$	11.51$
20 - 67	11.11$	11.11$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 67

Set of 1

IGBT transistor IGW60T120. IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): no. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G60T120. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 60A. Maximum collector current (A): 150A. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 480 ns. Gate breakdown voltage Ugs [V]: 6.5V. Maximum dissipation Ptot [W]: 375W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 31/05/2025, 22:25.

Technical documentation

IGBT transistor IGW60T120

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