IGBT transistor IGP03N120H2. Collector current Ic [A]: 3A. Collector peak current Ip [A]: 9.9A. Collector-emitter voltage Uce [V]: 1.2 kV. Component family: IGBT transistor. Configuration: PCB through-hole mounting. Gate breakdown voltage Ugs [V]: 3.9V. Housing (JEDEC standard): -. Housing: TO-220AB. Manufacturer's marking: G03H1202. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 62.5W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 281 ns. Switch-on time ton [nsec.]: 9.2 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/01/2025, 21:52