IGBT transistor HGTG20N60B3. Assembly/installation: PCB through-hole mounting. CE diode: no. Channel type: N. Collector current Ic [A]: 40A. Collector current: 40A. Collector peak current Ip [A]: 160A. Collector-emitter voltage Uce [V]: 600V. Collector/emitter voltage Vceo: 600V. Component family: IGBT transistor. Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Function: UFS Series IGBT. Gate breakdown voltage Ugs [V]: 6V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (JEDEC standard): -. Housing (according to data sheet): TO-247AC. Housing: TO-247. Ic(T=100°C): 20A. Ic(pulse): 160A. Manufacturer's marking: HG20N60B3. Marking on the case: HG20N60B3. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 165W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 165W. RoHS: yes. Saturation voltage VCE(sat): 1.8V. Spec info: Typical Fall Time 140ns at 150°C. Switch-off delay tf[nsec.]: 220 ns. Switch-on time ton [nsec.]: 25 ns. Td(off): 220 ns. Td(on): 25 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:29