IGBT transistor FGL40N120ANDTU
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 21.76$ | 21.76$ |
| 2 - 2 | 20.67$ | 20.67$ |
| 3 - 4 | 19.59$ | 19.59$ |
| 5 - 9 | 18.50$ | 18.50$ |
| 10 - 14 | 20.06$ | 20.06$ |
| 15 - 19 | 20.54$ | 20.54$ |
| 20 - 138 | 20.25$ | 20.25$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 21.76$ | 21.76$ |
| 2 - 2 | 20.67$ | 20.67$ |
| 3 - 4 | 19.59$ | 19.59$ |
| 5 - 9 | 18.50$ | 18.50$ |
| 10 - 14 | 20.06$ | 20.06$ |
| 15 - 19 | 20.54$ | 20.54$ |
| 20 - 138 | 20.25$ | 20.25$ |
IGBT transistor FGL40N120ANDTU. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-264. Housing (JEDEC standard): plastic tube. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FGL40N120AND. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 5.5V. Maximum dissipation Ptot [W]: 500W. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 20 ns. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264-3L. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.9V...3.15V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 7.5V. Maximum collector current (A): 160A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 14/04/2025, 00:25.
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