IGBT transistor FGL40N120ANDTU. Assembly/installation: PCB through-hole mounting. C(in): 3200pF. CE diode: yes. Channel type: N. Collector current Ic [A]: 40A. Collector current: 64A. Collector peak current Ip [A]: 160A. Collector-emitter voltage Uce [V]: 1.2 kV. Collector/emitter voltage Vceo: 1200V. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Conditioning unit: 25. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cost): 370pF. Function: UPS, AC/DC motor controls and general purpose inverters. Gate breakdown voltage Ugs [V]: 5.5V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 7.5V. Gate/emitter voltage VGE: 25V. Germanium diode: no. Housing (JEDEC standard): -. Housing (according to data sheet): TO-264-3L. Housing: TO-264 ( TOP-3L ). Ic(T=100°C): 40A. Ic(pulse): 160A. Manufacturer's marking: FGL40N120AND. Marking on the case: FGL40N120AND. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 500W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 500W. RoHS: yes. Saturation voltage VCE(sat): 2.9V...3.15V. Spec info: NPT-Trench IGBT. Switch-off delay tf[nsec.]: 110 ns. Switch-on time ton [nsec.]: 15 ns. Td(off): 110 ns. Td(on): 20 ns. Trr Diode (Min.): 75 ns. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 08:40