IGBT transistor FGA40N65SMD-DIóDA. Collector current Ic [A]: 40A. Collector peak current Ip [A]: 60.4k Ohms. Collector-emitter voltage Uce [V]: 650V. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Configuration: PCB through-hole mounting. Gate breakdown voltage Ugs [V]: 6V. Housing (JEDEC standard): -. Housing: TO-3PN. Manufacturer's marking: FGA40N65SMD. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 174W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 120ns. Switch-on time ton [nsec.]: 16 ns. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/01/2025, 21:12