GBI10J, 10A, 600V. Forward current (AV): 10A. VRRM: 600V. Assembly/installation: PCB through-hole mounting. Dielectric structure: Diode bridge. Equivalents: KBJ10J. Forward voltage Vf (min): 1.1V. Housing (according to data sheet): 30x20x3.6mm. Housing: SIP / SIL. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Number of terminals: 4. Operating temperature: -50...+150°C. Pitch: 10x7.5x7.5mm. Quantity per case: 4. RoHS: yes. Semiconductor material: silicon. Threshold voltage Vf (max): 1.1V. Original product from manufacturer: Diodes Inc. Quantity in stock updated on 10/31/2025, 06:45