Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.45$ | 0.45$ |
10 - 24 | 0.43$ | 0.43$ |
25 - 49 | 0.41$ | 0.41$ |
50 - 99 | 0.39$ | 0.39$ |
100 - 105 | 0.38$ | 0.38$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.45$ | 0.45$ |
10 - 24 | 0.43$ | 0.43$ |
25 - 49 | 0.41$ | 0.41$ |
50 - 99 | 0.39$ | 0.39$ |
100 - 105 | 0.38$ | 0.38$ |
ER3J. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 100A. MRI (max): 300uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC / DO214AB. Tr: 75 ns. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.7V. VRRM: 600V. Quantity in stock updated on 26/12/2024, 03:25.
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