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EGP10B

EGP10B
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.13$ 1.13$
2 - 2 1.08$ 1.08$
3 - 4 1.02$ 1.02$
5 - 9 0.96$ 0.96$
10 - 12 0.91$ 0.91$
Quantity (Set of 10) U.P
1 - 1 1.13$ 1.13$
2 - 2 1.08$ 1.08$
3 - 4 1.02$ 1.02$
5 - 9 0.96$ 0.96$
10 - 12 0.91$ 0.91$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 116
Set of 10

EGP10B. Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.6x4.9mm ). VRRM: 100V. Number of terminals: 2. Note: 30Ap/8.3ms. Note: High Efficiency Rectifiers. Quantity in stock updated on 26/12/2024, 04:25.

Equivalent products :

Quantity in stock : 466
UF4003

UF4003

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole m...
UF4003
Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Number of terminals: 2. Note: GI-S
UF4003
Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Number of terminals: 2. Note: GI-S
Set of 10
1.14$ VAT incl.
(1.14$ excl. VAT)
1.14$
Quantity in stock : 90
BYV26C

BYV26C

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: sili...
BYV26C
Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--30Ap, t=10ms
BYV26C
Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--30Ap, t=10ms
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$
Quantity in stock : 553
EGP20D

EGP20D

Semiconductor material: silicon. Forward current (AV): 2A. Note: Gl, S. Note: 75Ap/8.3ms. Number of ...
EGP20D
Semiconductor material: silicon. Forward current (AV): 2A. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 200V
EGP20D
Semiconductor material: silicon. Forward current (AV): 2A. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 200V
Set of 1
0.58$ VAT incl.
(0.58$ excl. VAT)
0.58$

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RoHS: yes. Component family: Analog integrated circuit. Housing: PCB soldering. Housing: DIP16. Conf...
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19TQ015

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1N5819

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1N5711

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1N5822

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RoHS: yes. Component family: Schottky rectifier diode. Housing: PCB soldering. Housing: DO-201. Hous...
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1N5817

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Cj: 110pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRI...
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Quantity in stock : 241
SB3200

SB3200

Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Fu...
SB3200
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