| Obsolete product, soon to be removed from the catalog | |
| Out of stock |
DSEI2X101-06A, 2x96A, 1200A, ISOTOP ( SOT227B ), ISOTOP ( SOT227B ), 600V
Quantity
Unit price
1-3
38.24$
4-7
36.41$
8-11
35.01$
12-19
33.59$
20+
31.19$
| Equivalence available | |
| Quantity in stock: 3 |
DSEI2X101-06A, 2x96A, 1200A, ISOTOP ( SOT227B ), ISOTOP ( SOT227B ), 600V. Forward current (AV): 2x96A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 600V. Assembly/installation: screw. Conditioning unit: 10. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.17V. Function: dual fast recovery diode. MRI (max): 20mA. MRI (min): 1mA. Number of terminals: 4. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 250W. Quantity per case: 2. RoHS: yes. Semiconductor material: silicon. Spec info: 1200Ap t=10ms, TVJ=45°C, 1080Ap t=10ms, TVJ=150°C. Technology: 'Epitaxial Diode'. Threshold voltage Vf (max): 1.25V. Trr Diode (Min.): 35 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45
DSEI2X101-06A
24 parameters
Forward current (AV)
2x96A
IFSM
1200A
Housing
ISOTOP ( SOT227B )
Housing (according to data sheet)
ISOTOP ( SOT227B )
VRRM
600V
Assembly/installation
screw
Conditioning unit
10
Conditioning
plastic tube
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.17V
Function
dual fast recovery diode
MRI (max)
20mA
MRI (min)
1mA
Number of terminals
4
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
250W
Quantity per case
2
RoHS
yes
Semiconductor material
silicon
Spec info
1200Ap t=10ms, TVJ=45°C, 1080Ap t=10ms, TVJ=150°C
Technology
'Epitaxial Diode'
Threshold voltage Vf (max)
1.25V
Trr Diode (Min.)
35 ns
Original product from manufacturer
IXYS