DSEI2X101-12A, 2x91A, 900A, ISOTOP ( SOT227B ), ISOTOP ( SOT227B ), 1200V

DSEI2X101-12A, 2x91A, 900A, ISOTOP ( SOT227B ), ISOTOP ( SOT227B ), 1200V

Quantity
Unit price
1-1
66.88$
2-3
64.01$
4-7
61.57$
8-15
59.69$
16+
56.26$
Obsolete product, soon to be removed from the catalog
Out of stock

DSEI2X101-12A, 2x91A, 900A, ISOTOP ( SOT227B ), ISOTOP ( SOT227B ), 1200V. Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Assembly/installation: screw. Conditioning unit: 10. Conditioning: plastic tube. Delivery time: KB. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.61V. Function: dual fast recovery diode. MRI (max): 15mA. MRI (min): 1.5mA. Note: 900App/10ms, 45°C. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 250W. Quantity per case: 2. Semiconductor material: silicon. Spec info: 810Ap t=10ms, TVJ=150°C. Technology: 'Epitaxial Diode'. Threshold voltage Vf (max): 1.87V. Trr Diode (Min.): 40 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
DSEI2X101-12A
24 parameters
Forward current (AV)
2x91A
IFSM
900A
Housing
ISOTOP ( SOT227B )
Housing (according to data sheet)
ISOTOP ( SOT227B )
VRRM
1200V
Assembly/installation
screw
Conditioning unit
10
Conditioning
plastic tube
Delivery time
KB
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.61V
Function
dual fast recovery diode
MRI (max)
15mA
MRI (min)
1.5mA
Note
900App/10ms, 45°C
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
250W
Quantity per case
2
Semiconductor material
silicon
Spec info
810Ap t=10ms, TVJ=150°C
Technology
'Epitaxial Diode'
Threshold voltage Vf (max)
1.87V
Trr Diode (Min.)
40 ns
Original product from manufacturer
IXYS