DB106, 1A, 600V

DB106, 1A, 600V

Quantity
Unit price
1-4
0.24$
5-24
0.19$
25-49
0.17$
50-99
0.15$
100+
0.13$
Equivalence available
Quantity in stock: 159

DB106, 1A, 600V. Forward current (AV): 1A. VRRM: 600V. Assembly/installation: PCB through-hole mounting. Cj: 25pF. Conditioning: tubus. Dielectric structure: Diode bridge. Driving current: 1A. Forward voltage Vf (min): 1.1V. Housing (according to data sheet): DIP-4. Housing: DIP. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Max reverse voltage: 600V, 800V. Number of terminals: 4. Operating temperature: -65...+150°C. Packaging: tubus. Pitch: 5.08mm. Pulse current max.: 50A. Quantity per case: 4. Rated Current: 1A. RoHS: yes. Semiconductor material: silicon. Terminal: THT. Threshold voltage Vf (max): 1.1V. Original product from manufacturer: Dc Components Co. Quantity in stock updated on 10/31/2025, 06:45

Technical documentation (PDF)
DB106
26 parameters
Forward current (AV)
1A
VRRM
600V
Assembly/installation
PCB through-hole mounting
Cj
25pF
Conditioning
tubus
Dielectric structure
Diode bridge
Driving current
1A
Forward voltage Vf (min)
1.1V
Housing (according to data sheet)
DIP-4
Housing
DIP
IFSM
50A
MRI (max)
500uA
MRI (min)
10uA
Max reverse voltage
600V, 800V
Number of terminals
4
Operating temperature
-65...+150°C
Packaging
tubus
Pitch
5.08mm
Pulse current max.
50A
Quantity per case
4
Rated Current
1A
RoHS
yes
Semiconductor material
silicon
Terminal
THT
Threshold voltage Vf (max)
1.1V
Original product from manufacturer
Dc Components Co.

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