Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.68$ | 0.68$ |
10 - 24 | 0.64$ | 0.64$ |
25 - 49 | 0.61$ | 0.61$ |
50 - 99 | 0.57$ | 0.57$ |
100 - 249 | 0.56$ | 0.56$ |
250 - 311 | 0.55$ | 0.55$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.68$ | 0.68$ |
10 - 24 | 0.64$ | 0.64$ |
25 - 49 | 0.61$ | 0.61$ |
50 - 99 | 0.57$ | 0.57$ |
100 - 249 | 0.56$ | 0.56$ |
250 - 311 | 0.55$ | 0.55$ |
BYV38. Cj: 15pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Silicon Mesa Rectifiers. Production date: 2013/40. Forward current (AV): 2A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFMS 50Ap (t=10ms). Quantity in stock updated on 25/12/2024, 17:25.
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