BYT30P-1000

Quantity	excl. VAT	VAT incl.
1 - 1	8.87$	8.87$
2 - 2	8.42$	8.42$

Quantity	U.P
1 - 1	8.87$	8.87$
2 - 2	8.42$	8.42$

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Quantity in stock : 2

Set of 1

BYT30P-1000. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. Forward current (AV): 30A. IFSM: 200A. MRI (max): 5mA. MRI (min): 100uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.8V. VRRM: 1000V. Number of terminals: 2. Note: metal part connected to the cathode. Quantity per case: 1. Spec info: IFSM--200Ap t=10ms. Quantity in stock updated on 25/12/2024, 16:25.

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Delivery in 2-3 days, with postal tracking!