BYT30P-1000

BYT30P-1000. Forward current (AV): 30A. IFSM: 200A. Housing: TO-3P ( TO-218 SOT-93 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. Note: metal part connected to the cathode. MRI (max): 5mA. MRI (min): 100uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.8V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 15/06/2025, 01:25.