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6A100G-R0G, 6A, 250A, R-6, R-6 ( 9.1x7.2mm ), 1000V
Quantity
Unit price
1-4
0.39$
5-24
0.34$
25-49
0.29$
50-99
0.25$
100+
0.20$
| Equivalence available | |
| Quantity in stock: 159 |
6A100G-R0G, 6A, 250A, R-6, R-6 ( 9.1x7.2mm ), 1000V. Forward current (AV): 6A. IFSM: 250A. Housing: R-6. Housing (according to data sheet): R-6 ( 9.1x7.2mm ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Cj: 60pF. Dielectric structure: Anode-Cathode. Equivalents: 6A100G-R0G. Forward voltage Vf (min): 1V. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 6A10. Number of terminals: 2. Operating temperature: -55...+150°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--250Ap (t=8.3ms). Threshold voltage Vf (max): 1V. Trr Diode (Min.): 2500 ns. Original product from manufacturer: Yangzhou Yangjie Electronic. Quantity in stock updated on 10/31/2025, 09:24
6A100G-R0G
22 parameters
Forward current (AV)
6A
IFSM
250A
Housing
R-6
Housing (according to data sheet)
R-6 ( 9.1x7.2mm )
VRRM
1000V
Assembly/installation
PCB through-hole mounting
Cj
60pF
Dielectric structure
Anode-Cathode
Equivalents
6A100G-R0G
Forward voltage Vf (min)
1V
MRI (max)
100uA
MRI (min)
10uA
Marking on the case
6A10
Number of terminals
2
Operating temperature
-55...+150°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM--250Ap (t=8.3ms)
Threshold voltage Vf (max)
1V
Trr Diode (Min.)
2500 ns
Original product from manufacturer
Yangzhou Yangjie Electronic