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1N5819HW-7-F

1N5819HW-7-F
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.29$ 1.29$
2 - 2 1.23$ 1.23$
3 - 4 1.16$ 1.16$
5 - 9 1.10$ 1.10$
10 - 24 1.03$ 1.03$
25 - 49 0.97$ 0.97$
50 - 288 0.82$ 0.82$
Quantity (Set of 10) U.P
1 - 1 1.29$ 1.29$
2 - 2 1.23$ 1.23$
3 - 4 1.16$ 1.16$
5 - 9 1.10$ 1.10$
10 - 24 1.03$ 1.03$
25 - 49 0.97$ 0.97$
50 - 288 0.82$ 0.82$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2879
Set of 10

1N5819HW-7-F. Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 25A. MRI (max): 1.5mA. MRI (min): 10uA. Marking on the case: SL. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 450mW. Housing: SOD-123. Housing (according to data sheet): SOD123 ( 2.85x1.7mm ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.32V. VRRM: 40V. Number of terminals: 2. Spec info: IFSM--25Ap, t=8.3ms. Quantity in stock updated on 24/12/2024, 17:25.

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