US1M, 1A, 30A, SMA (4.6x2.8 mm), 1000V
Quantity
Unit price
10-49
0.0876$
50-99
0.0759$
100-499
0.0682$
500+
0.0580$
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| Quantity in stock: 4661 |
US1M, 1A, 30A, SMA (4.6x2.8 mm), 1000V. Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): SMA (4.6x2.8 mm). VRRM: 1000V. Assembly/installation: surface-mounted component (SMD). Conditioning unit: 5000. Conditioning: roll. Dielectric structure: Anode-Cathode. Equivalents: US1M-13-F, US1M-E3/5AT, US1M-E3/61T, US1M-TP. Forward voltage Vf (min): 1.7V. Function: Ultrafast silicon rectifier diode. Number of terminals: 2. Operating temperature: -55...+150°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--30Ap. Threshold voltage Vf (max): 1.7V. Trr Diode (Min.): 75 ns. Original product from manufacturer: Smc. Minimum quantity: 10. Quantity in stock updated on 11/12/2025, 20:52
US1M
21 parameters
Forward current (AV)
1A
IFSM
30A
Housing (according to data sheet)
SMA (4.6x2.8 mm)
VRRM
1000V
Assembly/installation
surface-mounted component (SMD)
Conditioning unit
5000
Conditioning
roll
Dielectric structure
Anode-Cathode
Equivalents
US1M-13-F, US1M-E3/5AT, US1M-E3/61T, US1M-TP
Forward voltage Vf (min)
1.7V
Function
Ultrafast silicon rectifier diode
Number of terminals
2
Operating temperature
-55...+150°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM--30Ap
Threshold voltage Vf (max)
1.7V
Trr Diode (Min.)
75 ns
Original product from manufacturer
Smc
Minimum quantity
10