STTH1210D, TO-220, TO-220AC, 12A, 80A, 12A, TO-220AC, 1000V

STTH1210D, TO-220, TO-220AC, 12A, 80A, 12A, TO-220AC, 1000V

Quantity
Unit price
1-4
1.82$
5-24
1.56$
25-49
1.36$
50-99
1.24$
100+
1.04$
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Quantity in stock: 74

STTH1210D, TO-220, TO-220AC, 12A, 80A, 12A, TO-220AC, 1000V. Housing: TO-220. Housing (JEDEC standard): TO-220AC. Forward current (AV): 12A. IFSM: 80A. Forward current [A]: 12A. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Close voltage (repetitive) Vrrm [V]: 1 kV. Component family: Fast rectifier diode (tr<500ns). Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.3V. Function: Ultrafast recovery - high voltage diode. Ifsm [A]: 80A. Leakage current on closing Ir [A]: 10uA..30uA. Marking on the case: STTH1210D. Max temperature: +175°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+175°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--80Ap T=10ms. Switching speed (regeneration time) tr [sec.]: 90 ns. Temperature: +175°C. Threshold voltage Vf (max): 2V. Trr Diode (Min.): 48 ns. [V]: 1.8V @ 12A. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:43

Technical documentation (PDF)
STTH1210D
31 parameters
Housing
TO-220
Housing (JEDEC standard)
TO-220AC
Forward current (AV)
12A
IFSM
80A
Forward current [A]
12A
Housing (according to data sheet)
TO-220AC
VRRM
1000V
Assembly/installation
PCB through-hole mounting
Close voltage (repetitive) Vrrm [V]
1 kV
Component family
Fast rectifier diode (tr<500ns)
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.3V
Function
Ultrafast recovery - high voltage diode
Ifsm [A]
80A
Leakage current on closing Ir [A]
10uA..30uA
Marking on the case
STTH1210D
Max temperature
+175°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-65...+175°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM--80Ap T=10ms
Switching speed (regeneration time) tr [sec.]
90 ns
Temperature
+175°C
Threshold voltage Vf (max)
2V
Trr Diode (Min.)
48 ns
[V]
1.8V @ 12A
Original product from manufacturer
Stmicroelectronics