SS36-E3, 3A, 100A, DO-214, DO-214AB (SMA) 7.11x6.22mm, 60V

SS36-E3, 3A, 100A, DO-214, DO-214AB (SMA) 7.11x6.22mm, 60V

Quantity
Unit price
1-4
0.36$
5-49
0.31$
50-99
0.26$
100-199
0.23$
200+
0.18$
Quantity in stock: 807

SS36-E3, 3A, 100A, DO-214, DO-214AB (SMA) 7.11x6.22mm, 60V. Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMA) 7.11x6.22mm. VRRM: 60V. Assembly/installation: surface-mounted component (SMD). Cj: -. Dielectric structure: Anode-Cathode. Equivalents: SS36-E3/9AT. Forward voltage Vf (min): 0.75V. Function: Schottky Barrier Rectifier Diode, Surface Mount. MRI (max): 10mA. MRI (min): 500uA. Marking on the case: SS36. Number of terminals: 2. Operating temperature: -55...+150°C. Quantity per case: 1. RoHS: yes. Semiconductor material: Sb. Spec info: Ifsm 100Ap (t=8.3ms). Threshold voltage Vf (max): 0.75V. Trr Diode (Min.): -. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 07:33

SS36-E3
21 parameters
Forward current (AV)
3A
IFSM
100A
Housing
DO-214
Housing (according to data sheet)
DO-214AB (SMA) 7.11x6.22mm
VRRM
60V
Assembly/installation
surface-mounted component (SMD)
Dielectric structure
Anode-Cathode
Equivalents
SS36-E3/9AT
Forward voltage Vf (min)
0.75V
Function
Schottky Barrier Rectifier Diode, Surface Mount
MRI (max)
10mA
MRI (min)
500uA
Marking on the case
SS36
Number of terminals
2
Operating temperature
-55...+150°C
Quantity per case
1
RoHS
yes
Semiconductor material
Sb
Spec info
Ifsm 100Ap (t=8.3ms)
Threshold voltage Vf (max)
0.75V
Original product from manufacturer
Vishay