Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.27$ | 0.27$ |
10 - 24 | 0.25$ | 0.25$ |
25 - 49 | 0.24$ | 0.24$ |
50 - 99 | 0.23$ | 0.23$ |
100 - 249 | 0.21$ | 0.21$ |
250 - 499 | 0.20$ | 0.20$ |
500 - 1311 | 0.19$ | 0.19$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.27$ | 0.27$ |
10 - 24 | 0.25$ | 0.25$ |
25 - 49 | 0.24$ | 0.24$ |
50 - 99 | 0.23$ | 0.23$ |
100 - 249 | 0.21$ | 0.21$ |
250 - 499 | 0.20$ | 0.20$ |
500 - 1311 | 0.19$ | 0.19$ |
SMBJ60A. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 100A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO214AB ( 5.2x3.6mm ). Tolerance: 5%. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. VRRM: 60V. Number of terminals: 2. Quantity per case: 1. Spec info: Ppk--600W t=1ms, IFSM--100Ap t=8.3ms. Quantity in stock updated on 25/12/2024, 05:25.
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