Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.16$ | 0.16$ |
10 - 24 | 0.15$ | 0.15$ |
25 - 49 | 0.14$ | 0.14$ |
50 - 99 | 0.13$ | 0.13$ |
100 - 249 | 0.13$ | 0.13$ |
250 - 499 | 0.12$ | 0.12$ |
500 - 14445 | 0.11$ | 0.11$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.16$ | 0.16$ |
10 - 24 | 0.15$ | 0.15$ |
25 - 49 | 0.14$ | 0.14$ |
50 - 99 | 0.13$ | 0.13$ |
100 - 249 | 0.13$ | 0.13$ |
250 - 499 | 0.12$ | 0.12$ |
500 - 14445 | 0.11$ | 0.11$ |
SMBJ5-0A. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 100A. Marking on the case: KD. Breakdown voltage: 5V. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO214AB ( 5.2x3.6mm ). Tolerance: 5%. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. Number of terminals: 2. Quantity per case: 1. Note: screen printing/SMD code KD. Spec info: Ppk--600W t=1ms, IFSM--100Ap t=8.3ms. Quantity in stock updated on 25/12/2024, 06:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.