SMBJ36A. Assembly/installation: surface-mounted component (SMD). Breakdown voltage: 36V. Close direction holding voltage [V]: 36V. Component family: transient suppression diode. Configuration: surface-mounted component (SMD). Dielectric structure: Anode-Cathode. Diode type: TVS. Forward voltage Vf (min): 3.5V. Function: protection against overvoltage. Housing (according to data sheet): SMC DO214AB ( 5.2x3.6mm ). Housing: DO-214. IFSM: 100A. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 36V. Leakage current: 1uA. Max reverse voltage: 36V. Max temperature: +150°C.. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 600W. Power: 600W. Properties of semiconductor: 'glass passivated'. Pulse current max.: 10.3A. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: unidirectional. Spec info: Ppk--600W t=1ms, IFSM--100Ap t=8.3ms. Threshold voltage Vf (max): 5V. Tolerance: 5%. Transient suppressor type: unidirectional. Ubr [V] @ Ibr [A]: 44.2V @ 1mA. VRRM: 36V. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 10/31/2025, 08:14