SM4007, DO-213, DO-213AB, 1000V, 1A, 1A, 1A, 10A, DO-213AB ( 2.5x5mm )

SM4007, DO-213, DO-213AB, 1000V, 1A, 1A, 1A, 10A, DO-213AB ( 2.5x5mm )

Quantity
Unit price
10-49
0.0539$
50-99
0.0481$
100-199
0.0423$
200+
0.0364$
+269306 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 3825
Minimum: 10

SM4007, DO-213, DO-213AB, 1000V, 1A, 1A, 1A, 10A, DO-213AB ( 2.5x5mm ). Housing: DO-213. Housing (JEDEC standard): DO-213AB. VRRM: 1000V. Average Rectified Current per Diode: 1A. Forward current [A]: 1A. Forward current (AV): 1A. IFSM: 10A. Housing (according to data sheet): DO-213AB ( 2.5x5mm ). Assembly/installation: surface-mounted component (SMD). Close voltage (repetitive) Vrrm [V]: 1 kV. Component family: Surface mounted rectifier diode (SMD). Conditioning unit: 5000. Conduction voltage (threshold voltage): 1.1V. Configuration: surface-mounted component (SMD). Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 1A. Forward Voltage (Max): <1.1V / 1A. Forward voltage Vf (min): 1.1V. Function: 1N4007 SMD version. Ifsm [A]: 100A. Information: -. Leakage current on closing Ir [A]: 5uA..50uA. MRI (max): 50uA. MRI (min): 5uA. MSL: -. Max reverse voltage: 1kV, 1000V. Max temperature: +175°C.. Mounting Type: SMD. Number of terminals: 2. Number of terminals: 2. Operating temperature: -50...+175°C. Properties of semiconductor: 'glass passivated'. Pulse current max.: 30A. Quantity per case: 1. Reverse Leakage Current: <50uA / 2000V. Reverse Recovery Time (Max): 1500ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: SM40. Spec info: Ifsm 10Ap. Switching speed (regeneration time) tr [sec.]: -. Threshold voltage Vf (max): 1.1V. Threshold voltage: 1.1V. [V]: 1.1V @ 1A. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 10/31/2025, 08:27

Technical documentation (PDF)
SM4007
46 parameters
Housing
DO-213
Housing (JEDEC standard)
DO-213AB
VRRM
1000V
Average Rectified Current per Diode
1A
Forward current [A]
1A
Forward current (AV)
1A
IFSM
10A
Housing (according to data sheet)
DO-213AB ( 2.5x5mm )
Assembly/installation
surface-mounted component (SMD)
Close voltage (repetitive) Vrrm [V]
1 kV
Component family
Surface mounted rectifier diode (SMD)
Conditioning unit
5000
Conduction voltage (threshold voltage)
1.1V
Configuration
surface-mounted component (SMD)
Dielectric structure
Anode-Cathode
Diode Configuration
independent
Diode type
rectifier diode
Driving current
1A
Forward Voltage (Max)
<1.1V / 1A
Forward voltage Vf (min)
1.1V
Function
1N4007 SMD version
Ifsm [A]
100A
Leakage current on closing Ir [A]
5uA..50uA
MRI (max)
50uA
MRI (min)
5uA
Max reverse voltage
1kV, 1000V
Max temperature
+175°C.
Mounting Type
SMD
Number of terminals
2
Number of terminals
2
Operating temperature
-50...+175°C
Properties of semiconductor
'glass passivated'
Pulse current max.
30A
Quantity per case
1
Reverse Leakage Current
<50uA / 2000V
Reverse Recovery Time (Max)
1500ns
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Series
SM40
Spec info
Ifsm 10Ap
Threshold voltage Vf (max)
1.1V
Threshold voltage
1.1V
[V]
1.1V @ 1A
Original product from manufacturer
Diodes Inc
Minimum quantity
10