RHRP8120, TO-220, 8A, 100A, TO-220AC, 1200V

RHRP8120, TO-220, 8A, 100A, TO-220AC, 1200V

Quantity
Unit price
1-4
2.24$
5-24
1.96$
25-49
1.75$
50-99
1.56$
100+
1.31$
+2 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 78

RHRP8120, TO-220, 8A, 100A, TO-220AC, 1200V. Housing: TO-220. Forward current (AV): 8A. IFSM: 100A. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Assembly/installation: PCB through-hole mounting. Cj: 25pF. Conditioning: tubus. Dielectric structure: Anode-Cathode. Diode type: rectifier diode. Driving current: 16A. Forward voltage Vf (min): 2.6V. Heatsink Thickness: max 1.4mm. MRI (max): 500uA. MRI (min): 100uA. Max reverse voltage: 1.2kV. Note: Hyper fast Diode. Number of terminals: 2. Operating temperature: -65...+175°C. Power: 75W. Properties of semiconductor: ultra-fast switching. Pulse current max.: 100A. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Spec info: Ifsm 100Ap (1 Phase, 60Hz). Threshold voltage Vf (max): 3.2V. Trr Diode (Min.): 55 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 08:27

Technical documentation (PDF)
RHRP8120
30 parameters
Housing
TO-220
Forward current (AV)
8A
IFSM
100A
Housing (according to data sheet)
TO-220AC
VRRM
1200V
Assembly/installation
PCB through-hole mounting
Cj
25pF
Conditioning
tubus
Dielectric structure
Anode-Cathode
Diode type
rectifier diode
Driving current
16A
Forward voltage Vf (min)
2.6V
Heatsink Thickness
max 1.4mm
MRI (max)
500uA
MRI (min)
100uA
Max reverse voltage
1.2kV
Note
Hyper fast Diode
Number of terminals
2
Operating temperature
-65...+175°C
Power
75W
Properties of semiconductor
ultra-fast switching
Pulse current max.
100A
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Spec info
Ifsm 100Ap (1 Phase, 60Hz)
Threshold voltage Vf (max)
3.2V
Trr Diode (Min.)
55 ns
Original product from manufacturer
Fairchild