| Quantity in stock: 1890 |
MURS120T3G, DO-214, DO-214AA, 1A, 40A, 1A, SMB DO-214AB ( 4.3x3.6mm ), 200V
Quantity
Unit price
1-4
0.21$
5-49
0.17$
50-99
0.15$
100-199
0.13$
200+
0.11$
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| Equivalence available | |
| Quantity in stock: 1937 |
MURS120T3G, DO-214, DO-214AA, 1A, 40A, 1A, SMB DO-214AB ( 4.3x3.6mm ), 200V. Housing: DO-214. Housing (JEDEC standard): DO-214AA. Forward current (AV): 1A. IFSM: 40A. Forward current [A]: 1A. Housing (according to data sheet): SMB DO-214AB ( 4.3x3.6mm ). VRRM: 200V. Assembly/installation: surface-mounted component (SMD). Close voltage (repetitive) Vrrm [V]: 200V. Component family: fast rectification diode (tr<500ns). SMD mount. Configuration: surface-mounted component (SMD). Diode Tff(25°C): 25 ns. Forward voltage Vf (min): 0.71V. Function: Ultrafast Power Rectifiers. Ifsm [A]: 40A. Leakage current on closing Ir [A]: 2uA...50uA. MRI (max): 50uA. MRI (min): 2uA. Marking on the case: U1D. Max temperature: +175°C.. Note: screen printing/CMS code U1D. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+175°C. RoHS: yes. Semiconductor material: silicon. Switching speed (regeneration time) tr [sec.]: 35 ns. Threshold voltage Vf (max): 0.875V. Trr Diode (Min.): 35 ns. [V]: 0.875V @ 1A. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 08:27
MURS120T3G
31 parameters
Housing
DO-214
Housing (JEDEC standard)
DO-214AA
Forward current (AV)
1A
IFSM
40A
Forward current [A]
1A
Housing (according to data sheet)
SMB DO-214AB ( 4.3x3.6mm )
VRRM
200V
Assembly/installation
surface-mounted component (SMD)
Close voltage (repetitive) Vrrm [V]
200V
Component family
fast rectification diode (tr<500ns)
Configuration
surface-mounted component (SMD)
Diode Tff(25°C)
25 ns
Forward voltage Vf (min)
0.71V
Function
Ultrafast Power Rectifiers
Ifsm [A]
40A
Leakage current on closing Ir [A]
2uA...50uA
MRI (max)
50uA
MRI (min)
2uA
Marking on the case
U1D
Max temperature
+175°C.
Note
screen printing/CMS code U1D
Number of terminals
2
Number of terminals
2
Operating temperature
-65...+175°C
RoHS
yes
Semiconductor material
silicon
Switching speed (regeneration time) tr [sec.]
35 ns
Threshold voltage Vf (max)
0.875V
Trr Diode (Min.)
35 ns
[V]
0.875V @ 1A
Original product from manufacturer
ON Semiconductor