MUR1100E, 1A, 35A, DO-41, DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ), 1000V

MUR1100E, 1A, 35A, DO-41, DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ), 1000V

Quantity
Unit price
1-4
0.52$
5-24
0.43$
25-49
0.37$
50-99
0.34$
100+
0.30$
Equivalence available
Quantity in stock: 123

MUR1100E, 1A, 35A, DO-41, DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ), 1000V. Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Conditioning unit: 1000. Conditioning: -. Dielectric structure: Anode-Cathode. Equivalents: MUR1100ERLG. Forward voltage Vf (min): 1.5V. Function: Ultrafast “E” Series with High Reverse. Number of terminals: 2. Operating temperature: -65...+175°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM. Threshold voltage Vf (max): 1.75V. Trr Diode (Min.): 75 ns. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 06:24

Technical documentation (PDF)
MUR1100E
20 parameters
Forward current (AV)
1A
IFSM
35A
Housing
DO-41
Housing (according to data sheet)
DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm )
VRRM
1000V
Assembly/installation
PCB through-hole mounting
Conditioning unit
1000
Dielectric structure
Anode-Cathode
Equivalents
MUR1100ERLG
Forward voltage Vf (min)
1.5V
Function
Ultrafast “E” Series with High Reverse
Number of terminals
2
Operating temperature
-65...+175°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM
Threshold voltage Vf (max)
1.75V
Trr Diode (Min.)
75 ns
Original product from manufacturer
ON Semiconductor

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