MBR1060G, TO-220AC, TO-220AC, 10A

MBR1060G, TO-220AC, TO-220AC, 10A

Quantity
Unit price
1-49
1.68$
50+
1.27$
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Quantity in stock: 1112

MBR1060G, TO-220AC, TO-220AC, 10A. Housing: TO-220AC. Housing (JEDEC standard): TO-220AC. Forward current [A]: 10A. Assembly/installation: THT. Close voltage (repetitive) Vrrm [V]: 60V. Component family: Schottky rectifier diode. Conditioning: tubus. Conduction voltage (threshold voltage): 850mV. Configuration: PCB through-hole mounting. Diode type: Schottky rectifier diode. Driving current: 20A. Heatsink Thickness: 1.14...1.39mm. Ifsm [A]: 150A. Leakage current on closing Ir [A]: 100uA..22mA. Max reverse voltage: 60V. Max temperature: +175°C.. Number of terminals: 2. Packaging: tubus. Pulse current max.: 150A. RoHS: yes. Semiconductor structure: diode. Switching speed (regeneration time) tr [sec.]: -. Threshold voltage: 850mV. [V]: 0.7V @ 10A. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
MBR1060G
24 parameters
Housing
TO-220AC
Housing (JEDEC standard)
TO-220AC
Forward current [A]
10A
Assembly/installation
THT
Close voltage (repetitive) Vrrm [V]
60V
Component family
Schottky rectifier diode
Conditioning
tubus
Conduction voltage (threshold voltage)
850mV
Configuration
PCB through-hole mounting
Diode type
Schottky rectifier diode
Driving current
20A
Heatsink Thickness
1.14...1.39mm
Ifsm [A]
150A
Leakage current on closing Ir [A]
100uA..22mA
Max reverse voltage
60V
Max temperature
+175°C.
Number of terminals
2
Packaging
tubus
Pulse current max.
150A
RoHS
yes
Semiconductor structure
diode
Threshold voltage
850mV
[V]
0.7V @ 10A
Original product from manufacturer
Onsemi