| +4964 quickly | |
| Quantity in stock: 450 |
HER308, 3A, 125A, DO-201, DO-201AD ( 9.0x5.3mm ), 1000V
Quantity
Unit price
1-4
0.25$
5-24
0.21$
25-49
0.19$
50-99
0.17$
100+
0.13$
| Equivalence available | |
| Quantity in stock: 381 |
HER308, 3A, 125A, DO-201, DO-201AD ( 9.0x5.3mm ), 1000V. Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Cj: 80pF. Forward voltage Vf (min): 1V. Function: High Speed Switching. MRI (max): 200uA. MRI (min): 10uA. Note: high efficiency rectifier diode. Number of terminals: 2. Operating temperature: -65...+150°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: Ifsm 125Ap T=8.3ms. Threshold voltage Vf (max): 1V. Trr Diode (Min.): 75 ns. Weight: 1.1g. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 10/31/2025, 09:29
HER308
22 parameters
Forward current (AV)
3A
IFSM
125A
Housing
DO-201
Housing (according to data sheet)
DO-201AD ( 9.0x5.3mm )
VRRM
1000V
Assembly/installation
PCB through-hole mounting
Cj
80pF
Forward voltage Vf (min)
1V
Function
High Speed Switching
MRI (max)
200uA
MRI (min)
10uA
Note
high efficiency rectifier diode
Number of terminals
2
Operating temperature
-65...+150°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
Ifsm 125Ap T=8.3ms
Threshold voltage Vf (max)
1V
Trr Diode (Min.)
75 ns
Weight
1.1g
Original product from manufacturer
Taiwan Semiconductor