FR607, 6A, 200A, DO-201, DO-201AD ( 9.1x7.2mm ) ( R-6 ), 1000V

FR607, 6A, 200A, DO-201, DO-201AD ( 9.1x7.2mm ) ( R-6 ), 1000V

Quantity
Unit price
1-4
0.35$
5-24
0.30$
25-49
0.27$
50-99
0.24$
100+
0.20$
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Equivalence available
Quantity in stock: 2509

FR607, 6A, 200A, DO-201, DO-201AD ( 9.1x7.2mm ) ( R-6 ), 1000V. Forward current (AV): 6A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Cj: 100pF. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.2V. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. Operating temperature: -65...+150°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--200Ap/8.3mS. Threshold voltage Vf (max): 1.2V. Trr Diode (Min.): 500 ns. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
FR607
20 parameters
Forward current (AV)
6A
IFSM
200A
Housing
DO-201
Housing (according to data sheet)
DO-201AD ( 9.1x7.2mm ) ( R-6 )
VRRM
1000V
Assembly/installation
PCB through-hole mounting
Cj
100pF
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.2V
MRI (max)
200uA
MRI (min)
10uA
Number of terminals
2
Operating temperature
-65...+150°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM--200Ap/8.3mS
Threshold voltage Vf (max)
1.2V
Trr Diode (Min.)
500 ns
Original product from manufacturer
Taiwan Semiconductor

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