ER3J, 3A, 100A, DO-214, SMC / DO214AB, 600V

ER3J, 3A, 100A, DO-214, SMC / DO214AB, 600V

Quantity
Unit price
1-24
0.37$
25-49
0.32$
50-99
0.29$
100-199
0.26$
200+
0.23$
Quantity in stock: 101

ER3J, 3A, 100A, DO-214, SMC / DO214AB, 600V. Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC / DO214AB. VRRM: 600V. Assembly/installation: surface-mounted component (SMD). Cj: 20pF. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.7V. MRI (max): 300uA. MRI (min): 5uA. Number of terminals: 2. Operating temperature: -50...+150°C. RoHS: yes. Semiconductor material: silicon. Threshold voltage Vf (max): -. Tr: 75 ns. Original product from manufacturer: Diotec Semiconductor. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
ER3J
17 parameters
Forward current (AV)
3A
IFSM
100A
Housing
DO-214
Housing (according to data sheet)
SMC / DO214AB
VRRM
600V
Assembly/installation
surface-mounted component (SMD)
Cj
20pF
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.7V
MRI (max)
300uA
MRI (min)
5uA
Number of terminals
2
Operating temperature
-50...+150°C
RoHS
yes
Semiconductor material
silicon
Tr
75 ns
Original product from manufacturer
Diotec Semiconductor