ER2J, DO-214, 2A, 50A, 2A, SMB / DO214AA, 600V

ER2J, DO-214, 2A, 50A, 2A, SMB / DO214AA, 600V

Quantity
Unit price
1-4
0.22$
5-49
0.18$
50-99
0.16$
100-199
0.15$
200+
0.13$
+3735 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 432

ER2J, DO-214, 2A, 50A, 2A, SMB / DO214AA, 600V. Housing: DO-214. Forward current (AV): 2A. IFSM: 50A. Average Rectified Current per Diode: 2A. Housing (according to data sheet): SMB / DO214AA. VRRM: 600V. Assembly/installation: surface-mounted component (SMD). Cj: 15pF. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: Switching. Forward Voltage (Max): <1.7V / 1A. Forward voltage Vf (min): 1.7V. Information: -. MRI (max): 300uA. MRI (min): 5uA. MSL: -. Mounting Type: SMD. Number of terminals: 2. Operating temperature: -50...+150°C. Reverse Leakage Current: 5uA / 600V. Reverse Recovery Time (Max): 75ns. RoHS: yes. Semiconductor material: silicon. Series: ER2. Threshold voltage Vf (max): -. Tr: 75 ns. Original product from manufacturer: Diotec Semiconductor. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
ER2J
25 parameters
Housing
DO-214
Forward current (AV)
2A
IFSM
50A
Average Rectified Current per Diode
2A
Housing (according to data sheet)
SMB / DO214AA
VRRM
600V
Assembly/installation
surface-mounted component (SMD)
Cj
15pF
Dielectric structure
Anode-Cathode
Diode Configuration
independent
Diode type
Switching
Forward Voltage (Max)
<1.7V / 1A
Forward voltage Vf (min)
1.7V
MRI (max)
300uA
MRI (min)
5uA
Mounting Type
SMD
Number of terminals
2
Operating temperature
-50...+150°C
Reverse Leakage Current
5uA / 600V
Reverse Recovery Time (Max)
75ns
RoHS
yes
Semiconductor material
silicon
Series
ER2
Tr
75 ns
Original product from manufacturer
Diotec Semiconductor