DSEP60-12AR, 60A, 500A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 1200V

DSEP60-12AR, 60A, 500A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 1200V

Quantity
Unit price
1-4
14.31$
5-9
13.17$
10-14
12.32$
15-29
11.56$
30+
10.45$
Quantity in stock: 33

DSEP60-12AR, 60A, 500A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 1200V. Forward current (AV): 60A. IFSM: 500A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. VRRM: 1200V. Assembly/installation: PCB through-hole mounting. Conditioning unit: 10. Conditioning: plastic tube. Configuration: insulated housing, without drilling. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.74V. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 540Ap t=10ms, TVJ=45°C. Technology: HiPerFREDTM Epitaxial Diode. Threshold voltage Vf (max): 2.66V. Trr Diode (Min.): 40 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
DSEP60-12AR
25 parameters
Forward current (AV)
60A
IFSM
500A
Housing
ISOPLUS247 ( TO-247 )
Housing (according to data sheet)
ISOPLUS247
VRRM
1200V
Assembly/installation
PCB through-hole mounting
Conditioning unit
10
Conditioning
plastic tube
Configuration
insulated housing, without drilling
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.74V
Function
Diode 'soft recovery'
MRI (max)
2.5mA
MRI (min)
650uA
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
190W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
540Ap t=10ms, TVJ=45°C
Technology
HiPerFREDTM Epitaxial Diode
Threshold voltage Vf (max)
2.66V
Trr Diode (Min.)
40 ns
Original product from manufacturer
IXYS