DSEP60-12A, 70A, 500A, TO-247, TO-247AD, 1200V

DSEP60-12A, 70A, 500A, TO-247, TO-247AD, 1200V

Quantity
Unit price
1-4
11.72$
5-9
10.64$
10-14
12.80$
15-29
9.84$
30-59
8.58$
60+
7.66$
Quantity in stock: 27

DSEP60-12A, 70A, 500A, TO-247, TO-247AD, 1200V. Forward current (AV): 70A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Assembly/installation: PCB through-hole mounting. Conditioning unit: 30. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.74V. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 500Ap t=10ms, TVJ=45°C. Technology: HiPerFREDTM Epitaxial Diode. Threshold voltage Vf (max): 2.66V. Trr Diode (Min.): 40 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
DSEP60-12A
24 parameters
Forward current (AV)
70A
IFSM
500A
Housing
TO-247
Housing (according to data sheet)
TO-247AD
VRRM
1200V
Assembly/installation
PCB through-hole mounting
Conditioning unit
30
Conditioning
plastic tube
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.74V
Function
Diode 'soft recovery'
MRI (max)
2.5mA
MRI (min)
650uA
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
190W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
500Ap t=10ms, TVJ=45°C
Technology
HiPerFREDTM Epitaxial Diode
Threshold voltage Vf (max)
2.66V
Trr Diode (Min.)
40 ns
Original product from manufacturer
IXYS