DSEP30-12A, TO-247, TO-247AD, 30A, 30A, 200A, TO-247AD, 1200V

DSEP30-12A, TO-247, TO-247AD, 30A, 30A, 200A, TO-247AD, 1200V

Quantity
Unit price
1-4
8.42$
5-9
7.80$
10-24
7.04$
25+
6.37$
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Quantity in stock: 35

DSEP30-12A, TO-247, TO-247AD, 30A, 30A, 200A, TO-247AD, 1200V. Housing: TO-247. Housing (JEDEC standard): TO-247AD. Forward current [A]: 30A. Forward current (AV): 30A. IFSM: 200A. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Assembly/installation: PCB through-hole mounting. Close voltage (repetitive) Vrrm [V]: 1.2 kV. Component family: Fast rectifier diode (tr<500ns). Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.78V. Function: Diode 'soft recovery'. Ifsm [A]: 200A. Leakage current on closing Ir [A]: 250uA..1mA. MRI (max): 1mA. MRI (min): 250uA. Max temperature: +175°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 165W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 200Ap t=10ms, TVJ=45°C. Switching speed (regeneration time) tr [sec.]: 40 ns. Technology: HiPerFREDTM Epitaxial Diode. Threshold voltage Vf (max): 2.74V. Trr Diode (Min.): 40 ns. [V]: 2.74V @ 30A. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
DSEP30-12A
35 parameters
Housing
TO-247
Housing (JEDEC standard)
TO-247AD
Forward current [A]
30A
Forward current (AV)
30A
IFSM
200A
Housing (according to data sheet)
TO-247AD
VRRM
1200V
Assembly/installation
PCB through-hole mounting
Close voltage (repetitive) Vrrm [V]
1.2 kV
Component family
Fast rectifier diode (tr<500ns)
Conditioning unit
30
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.78V
Function
Diode 'soft recovery'
Ifsm [A]
200A
Leakage current on closing Ir [A]
250uA..1mA
MRI (max)
1mA
MRI (min)
250uA
Max temperature
+175°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
165W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
200Ap t=10ms, TVJ=45°C
Switching speed (regeneration time) tr [sec.]
40 ns
Technology
HiPerFREDTM Epitaxial Diode
Threshold voltage Vf (max)
2.74V
Trr Diode (Min.)
40 ns
[V]
2.74V @ 30A
Original product from manufacturer
IXYS