DSEP12-12A, 15A, 90A, TO-220, TO-220AC, 1200V

DSEP12-12A, 15A, 90A, TO-220, TO-220AC, 1200V

Quantity
Unit price
1-4
3.08$
5-9
2.78$
10-24
2.54$
25-49
2.34$
50+
2.07$
Quantity in stock: 63

DSEP12-12A, 15A, 90A, TO-220, TO-220AC, 1200V. Forward current (AV): 15A. IFSM: 90A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Assembly/installation: PCB through-hole mounting. Conditioning unit: 50. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.79V. Function: Diode 'soft recovery'. MRI (max): 0.5mA. MRI (min): 100uA. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 95W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 90Ap t=10ms, TVJ=45°C. Technology: HiPerFREDTM Epitaxial Diode. Threshold voltage Vf (max): 2.75V. Trr Diode (Min.): 40 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
DSEP12-12A
24 parameters
Forward current (AV)
15A
IFSM
90A
Housing
TO-220
Housing (according to data sheet)
TO-220AC
VRRM
1200V
Assembly/installation
PCB through-hole mounting
Conditioning unit
50
Conditioning
plastic tube
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.79V
Function
Diode 'soft recovery'
MRI (max)
0.5mA
MRI (min)
100uA
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
95W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
90Ap t=10ms, TVJ=45°C
Technology
HiPerFREDTM Epitaxial Diode
Threshold voltage Vf (max)
2.75V
Trr Diode (Min.)
40 ns
Original product from manufacturer
IXYS