DSEI60-06A, TO-247, TO-247AD, 60A, 60A, 550A, TO-247AD, 600V

DSEI60-06A, TO-247, TO-247AD, 60A, 60A, 550A, TO-247AD, 600V

Quantity
Unit price
1-4
9.17$
5-14
8.47$
15-29
8.05$
30-59
7.61$
60+
6.92$
+63 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 13

DSEI60-06A, TO-247, TO-247AD, 60A, 60A, 550A, TO-247AD, 600V. Housing: TO-247. Housing (JEDEC standard): TO-247AD. Forward current [A]: 60A. Forward current (AV): 60A. IFSM: 550A. Housing (according to data sheet): TO-247AD. VRRM: 600V. Assembly/installation: PCB through-hole mounting. Close voltage (repetitive) Vrrm [V]: 600V. Component family: Fast rectifier diode (tr<500ns). Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.5V. Function: 'Fast Recovery'. Ifsm [A]: 600A. Leakage current on closing Ir [A]: 200uA..14mA. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 166W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 480Ap t=10ms, TVJ=150°C. Switching speed (regeneration time) tr [sec.]: 50 ns. Technology: 'Epitaxial Diode'. Threshold voltage Vf (max): 1.8V. Trr Diode (Min.): 35 ns. Weight: 5.6g. [V]: 2.55V @ 60A. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
DSEI60-06A
34 parameters
Housing
TO-247
Housing (JEDEC standard)
TO-247AD
Forward current [A]
60A
Forward current (AV)
60A
IFSM
550A
Housing (according to data sheet)
TO-247AD
VRRM
600V
Assembly/installation
PCB through-hole mounting
Close voltage (repetitive) Vrrm [V]
600V
Component family
Fast rectifier diode (tr<500ns)
Conditioning unit
30
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.5V
Function
'Fast Recovery'
Ifsm [A]
600A
Leakage current on closing Ir [A]
200uA..14mA
Max temperature
+150°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
166W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
480Ap t=10ms, TVJ=150°C
Switching speed (regeneration time) tr [sec.]
50 ns
Technology
'Epitaxial Diode'
Threshold voltage Vf (max)
1.8V
Trr Diode (Min.)
35 ns
Weight
5.6g
[V]
2.55V @ 60A
Original product from manufacturer
IXYS