DSEI30-12A, TO-247, TO-247AD, 26A, 28A, 200A, TO-247AD, 1200V

DSEI30-12A, TO-247, TO-247AD, 26A, 28A, 200A, TO-247AD, 1200V

Quantity
Unit price
1-4
5.45$
5-14
4.82$
15-29
4.37$
30-59
4.06$
60+
3.56$
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Quantity in stock: 66

DSEI30-12A, TO-247, TO-247AD, 26A, 28A, 200A, TO-247AD, 1200V. Housing: TO-247. Housing (JEDEC standard): TO-247AD. Forward current [A]: 26A. Forward current (AV): 28A. IFSM: 200A. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Assembly/installation: PCB through-hole mounting. Close voltage (repetitive) Vrrm [V]: 1.2 kV. Component family: Fast rectifier diode (tr<500ns). Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 2.2V. Function: 'Fast Recovery'. Ifsm [A]: 210A. Leakage current on closing Ir [A]: 0.75mA..7mA. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 138W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 375Ap t=10ms, TVJ=150°C. Switching speed (regeneration time) tr [sec.]: 60 ns. Technology: 'Epitaxial Diode'. Threshold voltage Vf (max): 2.55V. Trr Diode (Min.): 40 ns. [V]: 2.55V @ 30A. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
DSEI30-12A
33 parameters
Housing
TO-247
Housing (JEDEC standard)
TO-247AD
Forward current [A]
26A
Forward current (AV)
28A
IFSM
200A
Housing (according to data sheet)
TO-247AD
VRRM
1200V
Assembly/installation
PCB through-hole mounting
Close voltage (repetitive) Vrrm [V]
1.2 kV
Component family
Fast rectifier diode (tr<500ns)
Conditioning unit
30
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
2.2V
Function
'Fast Recovery'
Ifsm [A]
210A
Leakage current on closing Ir [A]
0.75mA..7mA
Max temperature
+150°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
138W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
375Ap t=10ms, TVJ=150°C
Switching speed (regeneration time) tr [sec.]
60 ns
Technology
'Epitaxial Diode'
Threshold voltage Vf (max)
2.55V
Trr Diode (Min.)
40 ns
[V]
2.55V @ 30A
Original product from manufacturer
IXYS