DSEI30-10A, TO-247, TO-247AD, 30A, 37A, 375A, TO-247AD, 1000V

DSEI30-10A, TO-247, TO-247AD, 30A, 37A, 375A, TO-247AD, 1000V

Quantity
Unit price
1-4
5.67$
5-14
5.04$
15-29
4.63$
30-59
4.32$
60+
3.82$
+10 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 31

DSEI30-10A, TO-247, TO-247AD, 30A, 37A, 375A, TO-247AD, 1000V. Housing: TO-247. Housing (JEDEC standard): TO-247AD. Forward current [A]: 30A. Forward current (AV): 37A. IFSM: 375A. Housing (according to data sheet): TO-247AD. VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Close voltage (repetitive) Vrrm [V]: 1 kV. Component family: Silicon rectifier diode. Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 2V. Function: 'Fast Recovery'. Ifsm [A]: 210A. Leakage current on closing Ir [A]: 0.75mA..7mA. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 138W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 375Ap t=10ms, TVJ=150°C. Switching speed (regeneration time) tr [sec.]: 50 ns. Technology: 'Epitaxial Diode'. Threshold voltage Vf (max): 2.4V. Trr Diode (Min.): 35 ns. [V]: 2.4V @ 36A. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
DSEI30-10A
33 parameters
Housing
TO-247
Housing (JEDEC standard)
TO-247AD
Forward current [A]
30A
Forward current (AV)
37A
IFSM
375A
Housing (according to data sheet)
TO-247AD
VRRM
1000V
Assembly/installation
PCB through-hole mounting
Close voltage (repetitive) Vrrm [V]
1 kV
Component family
Silicon rectifier diode
Conditioning unit
30
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
2V
Function
'Fast Recovery'
Ifsm [A]
210A
Leakage current on closing Ir [A]
0.75mA..7mA
Max temperature
+150°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
138W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
375Ap t=10ms, TVJ=150°C
Switching speed (regeneration time) tr [sec.]
50 ns
Technology
'Epitaxial Diode'
Threshold voltage Vf (max)
2.4V
Trr Diode (Min.)
35 ns
[V]
2.4V @ 36A
Original product from manufacturer
IXYS