DSEI2X121-02A, ISOTOP ( SOT227B ), 2x123A, 2x123A, 1200A, ISOTOP ( SOT227B ), 200V
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DSEI2X121-02A, ISOTOP ( SOT227B ), 2x123A, 2x123A, 1200A, ISOTOP ( SOT227B ), 200V. Housing: ISOTOP ( SOT227B ). Housing (JEDEC standard): -. Forward current [A]: 2x123A. Forward current (AV): 2x123A. IFSM: 1200A. Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 200V. Assembly/installation: screw. Close voltage (repetitive) Vrrm [V]: 200V. Component family: Silicon rectifier diode. Conditioning unit: 10. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 0.89V. Function: dual fast recovery diode. Ifsm [A]: 1200A. Leakage current on closing Ir [A]: 1mA..20mA. MRI (max): 20mA. MRI (min): 1mA. Max temperature: +150°C.. Number of terminals: 4. Number of terminals: 4. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 357W. Quantity per case: 2. RoHS: yes. Semiconductor material: silicon. Spec info: 1080Ap t=10ms, TVJ=150°C. Switching speed (regeneration time) tr [sec.]: 50 ns. Technology: 'Epitaxial Diode'. Threshold voltage Vf (max): 1.1V. Trr Diode (Min.): 35 ns. [V]: 1.1V @ 120A. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45