DSEI2X121-02A, ISOTOP ( SOT227B ), 2x123A, 2x123A, 1200A, ISOTOP ( SOT227B ), 200V

DSEI2X121-02A, ISOTOP ( SOT227B ), 2x123A, 2x123A, 1200A, ISOTOP ( SOT227B ), 200V

Quantity
Unit price
1-1
52.35$
2-3
49.14$
4-5
46.59$
6-9
44.41$
10+
41.44$
+5 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 2

DSEI2X121-02A, ISOTOP ( SOT227B ), 2x123A, 2x123A, 1200A, ISOTOP ( SOT227B ), 200V. Housing: ISOTOP ( SOT227B ). Housing (JEDEC standard): -. Forward current [A]: 2x123A. Forward current (AV): 2x123A. IFSM: 1200A. Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 200V. Assembly/installation: screw. Close voltage (repetitive) Vrrm [V]: 200V. Component family: Silicon rectifier diode. Conditioning unit: 10. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 0.89V. Function: dual fast recovery diode. Ifsm [A]: 1200A. Leakage current on closing Ir [A]: 1mA..20mA. MRI (max): 20mA. MRI (min): 1mA. Max temperature: +150°C.. Number of terminals: 4. Number of terminals: 4. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 357W. Quantity per case: 2. RoHS: yes. Semiconductor material: silicon. Spec info: 1080Ap t=10ms, TVJ=150°C. Switching speed (regeneration time) tr [sec.]: 50 ns. Technology: 'Epitaxial Diode'. Threshold voltage Vf (max): 1.1V. Trr Diode (Min.): 35 ns. [V]: 1.1V @ 120A. Original product from manufacturer: IXYS. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
DSEI2X121-02A
34 parameters
Housing
ISOTOP ( SOT227B )
Forward current [A]
2x123A
Forward current (AV)
2x123A
IFSM
1200A
Housing (according to data sheet)
ISOTOP ( SOT227B )
VRRM
200V
Assembly/installation
screw
Close voltage (repetitive) Vrrm [V]
200V
Component family
Silicon rectifier diode
Conditioning unit
10
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
0.89V
Function
dual fast recovery diode
Ifsm [A]
1200A
Leakage current on closing Ir [A]
1mA..20mA
MRI (max)
20mA
MRI (min)
1mA
Max temperature
+150°C.
Number of terminals
4
Number of terminals
4
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
357W
Quantity per case
2
RoHS
yes
Semiconductor material
silicon
Spec info
1080Ap t=10ms, TVJ=150°C
Switching speed (regeneration time) tr [sec.]
50 ns
Technology
'Epitaxial Diode'
Threshold voltage Vf (max)
1.1V
Trr Diode (Min.)
35 ns
[V]
1.1V @ 120A
Original product from manufacturer
IXYS