DSEI120-12A, 100A, 600A, TO-247, TO-247AD, 1200V

DSEI120-12A, 100A, 600A, TO-247, TO-247AD, 1200V

Quantity
Unit price
1-4
16.81$
5-9
14.89$
10-29
13.66$
30-59
12.77$
60+
11.58$
Quantity in stock: 24

DSEI120-12A, 100A, 600A, TO-247, TO-247AD, 1200V. Forward current (AV): 100A. IFSM: 600A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Assembly/installation: PCB through-hole mounting. Conditioning unit: 30. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.55V. Function: 'Fast Recovery'. MRI (max): 20mA. MRI (min): 1.5mA. Number of terminals: 2. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 357W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 540Ap t=10ms, TVJ=150°C. Technology: 'Epitaxial Diode (FRED)'. Threshold voltage Vf (max): 1.8V. Trr Diode (Min.): 40 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 06:07

Technical documentation (PDF)
DSEI120-12A
24 parameters
Forward current (AV)
100A
IFSM
600A
Housing
TO-247
Housing (according to data sheet)
TO-247AD
VRRM
1200V
Assembly/installation
PCB through-hole mounting
Conditioning unit
30
Conditioning
plastic tube
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.55V
Function
'Fast Recovery'
MRI (max)
20mA
MRI (min)
1.5mA
Number of terminals
2
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
357W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
540Ap t=10ms, TVJ=150°C
Technology
'Epitaxial Diode (FRED)'
Threshold voltage Vf (max)
1.8V
Trr Diode (Min.)
40 ns
Original product from manufacturer
IXYS