DSEI12-06A, TO-220, TO-220AC, 14A, 14A, 100A, TO-220AC, 600V

DSEI12-06A, TO-220, TO-220AC, 14A, 14A, 100A, TO-220AC, 600V

Quantity
Unit price
1-4
2.56$
5-9
2.28$
10-24
2.06$
25-49
1.86$
50+
1.55$
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Quantity in stock: 33

DSEI12-06A, TO-220, TO-220AC, 14A, 14A, 100A, TO-220AC, 600V. Housing: TO-220. Housing (JEDEC standard): TO-220AC. Forward current [A]: 14A. Forward current (AV): 14A. IFSM: 100A. Housing (according to data sheet): TO-220AC. VRRM: 600V. Assembly/installation: PCB through-hole mounting. Close voltage (repetitive) Vrrm [V]: 600V. Component family: Fast rectifier diode (tr<500ns). Conditioning unit: 50. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.5V. Function: 'Fast Recovery'. Ifsm [A]: 100A. Leakage current on closing Ir [A]: 50uA..3mA. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 62W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 100Ap t=10ms, TVJ=150°C. Switching speed (regeneration time) tr [sec.]: 50 ns. Technology: 'Epitaxial Diode'. Threshold voltage Vf (max): 1.7V. Trr Diode (Min.): 35 ns. [V]: 1.7V @ 16A. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 06:07

Technical documentation (PDF)
DSEI12-06A
33 parameters
Housing
TO-220
Housing (JEDEC standard)
TO-220AC
Forward current [A]
14A
Forward current (AV)
14A
IFSM
100A
Housing (according to data sheet)
TO-220AC
VRRM
600V
Assembly/installation
PCB through-hole mounting
Close voltage (repetitive) Vrrm [V]
600V
Component family
Fast rectifier diode (tr<500ns)
Conditioning unit
50
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.5V
Function
'Fast Recovery'
Ifsm [A]
100A
Leakage current on closing Ir [A]
50uA..3mA
Max temperature
+150°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
62W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
100Ap t=10ms, TVJ=150°C
Switching speed (regeneration time) tr [sec.]
50 ns
Technology
'Epitaxial Diode'
Threshold voltage Vf (max)
1.7V
Trr Diode (Min.)
35 ns
[V]
1.7V @ 16A
Original product from manufacturer
IXYS