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BZW06-5V8B

BZW06-5V8B
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Quantity excl. VAT VAT incl.
1 - 9 0.33$ 0.33$
10 - 24 0.31$ 0.31$
25 - 49 0.30$ 0.30$
50 - 99 0.27$ 0.27$
100 - 249 0.26$ 0.26$
250 - 499 0.23$ 0.23$
500 - 7597 0.22$ 0.22$
Quantity U.P
1 - 9 0.33$ 0.33$
10 - 24 0.31$ 0.31$
25 - 49 0.30$ 0.30$
50 - 99 0.27$ 0.27$
100 - 249 0.26$ 0.26$
250 - 499 0.23$ 0.23$
500 - 7597 0.22$ 0.22$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 7597
Set of 1

BZW06-5V8B. RoHS: yes. Housing: DO-15. Ubr [V] @ Ibr [A]: 6.8V @ 10mA. Ubr [V] @ Ibr [A]: 7.14V @ 10mA. Leakage current on closing Ir [A] @ Uz [V]: 1000uA @ 5.8V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Dielectric structure: bidirectional. Semiconductor material: silicon. Function: overvoltage protection, bidirectional protective diode. Note: 0.6kW (VWM 5.8V). Number of terminals: 2. Assembly/installation: PCB through-hole mounting. VRRM: 5.8V. Quantity in stock updated on 25/12/2024, 17:25.

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