Electronic components and equipment, for businesses and individuals

BZT03C150

BZT03C150
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.58$ 1.58$
5 - 9 1.50$ 1.50$
10 - 24 1.46$ 1.46$
25 - 49 1.43$ 1.43$
50 - 98 1.39$ 1.39$
Quantity U.P
1 - 4 1.58$ 1.58$
5 - 9 1.50$ 1.50$
10 - 24 1.46$ 1.46$
25 - 49 1.43$ 1.43$
50 - 98 1.39$ 1.39$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 98
Set of 1

BZT03C150. Dielectric structure: unidirectional. Semiconductor material: silicon. Function: zener diode, surge protection. Breakdown voltage: 150V. Dimensions: 4.57x3.81mm. Pd (Power Dissipation, Max): 3.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Tolerance: 5%. Zener voltage: 150V. Original product from manufacturer Vishay. Quantity in stock updated on 12/08/2025, 14:08.

Equivalent products :

Quantity in stock : 2690
P6KE150A

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Breakdown voltage: 150V. Power: 600W. Dielectric structure: unidirectional. Close direction holding ...
P6KE150A
Breakdown voltage: 150V. Power: 600W. Dielectric structure: unidirectional. Close direction holding voltage [V]: 128V. Housing: DO-15
P6KE150A
Breakdown voltage: 150V. Power: 600W. Dielectric structure: unidirectional. Close direction holding voltage [V]: 128V. Housing: DO-15
Set of 10
0.00$ VAT incl.
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Quantity in stock : 544
1-5KE150A

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RoHS: yes. Forward voltage Vf (min): 3.5V. Quantity per case: 1. Dielectric structure: Anode-Cathode...
1-5KE150A
RoHS: yes. Forward voltage Vf (min): 3.5V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 200A. Number of terminals: 2. Breakdown voltage: 150V. Pd (Power Dissipation, Max): 1500W. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.0x5.0mm ). Tolerance: 5%. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 5V
1-5KE150A
RoHS: yes. Forward voltage Vf (min): 3.5V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 200A. Number of terminals: 2. Breakdown voltage: 150V. Pd (Power Dissipation, Max): 1500W. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.0x5.0mm ). Tolerance: 5%. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 5V
Set of 1
0.62$ VAT incl.
(0.62$ excl. VAT)
0.62$

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1-5KE15CA

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